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| SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3405 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Excellent Switching Times +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 High colletor Breakdown Voltage: VCEO=800V 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Icp IB PC Rating 900 800 8 0.8 1.5 0.2 1 20 150 -55 to +150 Unit V V V A A A W W Electrical Characteristics Ta = 25 Parameter collector cutoff current emitter cutoff current Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Switching time turn-0n time Symbol ICBO IEBO V(BR)EBO V(BR)CEO hFE VCE(sat) VBE(sat) tr Testconditons VCB=800V,IE=0 VEB=8V,IC=0 IE=1mA,IC=0 IC=10mA,IB=0 VCE=5V,IC=1mA VCE=5V,IC=0.3A IC=0.3A,IB=0.06A IC=0.3A,IB=0.06A 900 800 6 10 0.5 1.2 1 V V is Min Typ Max 100 1 Unit iA mA V V Switching storage time tstg 4.0 Switching fall time tf 1 3.80 tr=1.0is (Max.) tf=1.0is (Max.) at IC=0.3A is is www.kexin.com.cn 1 |
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